|
|
Numéro de référence | NCE75H35T | ||
Description | NCE N-Channel Enhancement Mode Power MOSFET | ||
Fabricant | NCE Power | ||
Logo | |||
http://www.ncepower.com
Pb Free Product
NCE75H35T
NCE N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The NCE75H35T uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It can
be used in Automotive applications and a wide variety of other
applications.
GENERAL FEATURES
● VDSS =75V,ID =350A
RDS(ON) < 2.5mΩ @ VGS=10V (Typ:1.9 mΩ)
Schematic diagram
● Good stability and uniformity with high EAS
● Special process technology for high ESD capability
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
● Excellent package for good heat dissipation
Application
● Automotive applications
● Hard Switched and High Frequency Circuits
● Uninterruptible Power Supply
Marking and pin Assignment
100% UIS TESTED!
100% ΔVds TESTED!
TO-247 top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
NCE75H35T
NCE75H35T
TO-247
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃)
Pulsed Drain Current
Maximum Power Dissipation
Derating factor
ID (100℃)
IDM
PD
Single pulse avalanche energy (Note 3)
EAS
Peak Diode Recovery dv/dt (Note 4)
dv/dt
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
75
±20
350
270
1280
460
3.07
3500
13
-55 To 175
Unit
V
V
A
A
A
W
W/℃
mJ
V/ns
℃
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.1
|
|||
Pages | Pages 7 | ||
Télécharger | [ NCE75H35T ] |
No | Description détaillée | Fabricant |
NCE75H35T | NCE N-Channel Enhancement Mode Power MOSFET | NCE Power |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |