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IPI80N06S4-07 fiches techniques PDF

Infineon - Power-Transistor

Numéro de référence IPI80N06S4-07
Description Power-Transistor
Fabricant Infineon 
Logo Infineon 





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IPI80N06S4-07 fiche technique
OptiMOS®-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
IPB80N06S4-07
IPI80N06S4-07, IPP80N06S4-07
Product Summary
V DS
R DS(on),max (SMD version)
ID
60 V
7.1 m
80 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type
IPB80N06S4-07
IPI80N06S4-07
IPP80N06S4-07
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Marking
4N0607
4N0607
4N0607
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I D T C=25°C, V GS=10V1)
T C=100°C, V GS=10V2)
Pulsed drain current2)
I D,pulse T C=25°C
Avalanche energy, single pulse2) E AS I D=40A
Avalanche current, single pulse I AS -
Gate source voltage
V GS
-
Power dissipation
P tot T C=25°C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1
-
Value
80
58
320
71
80
±20
79
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
Rev. 1.0
page 1
2009-03-24

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