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Numéro de référence | IPP80N06S4-05 | ||
Description | Power-Transistor | ||
Fabricant | Infineon | ||
Logo | |||
1 Page
OptiMOS®-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
IPB80N06S4-05
IPI80N06S4-05, IPP80N06S4-05
Product Summary
V DS
R DS(on),max (SMD version)
ID
60 V
5.4 mΩ
80 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type
IPB80N06S4-05
IPI80N06S4-05
IPP80N06S4-05
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Marking
4N0605
4N0605
4N0605
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I D T C=25°C, V GS=10V1)
T C=100°C, V GS=10V2)
Pulsed drain current2)
I D,pulse T C=25°C
Avalanche energy, single pulse2) E AS I D=40A
Avalanche current, single pulse I AS -
Gate source voltage
V GS
-
Power dissipation
P tot T C=25°C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1
-
Value
80
75
320
152
80
±20
107
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
Rev. 1.0
page 1
2009-03-24
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Pages | Pages 9 | ||
Télécharger | [ IPP80N06S4-05 ] |
No | Description détaillée | Fabricant |
IPP80N06S4-05 | Power-Transistor | Infineon |
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