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PDF IPD90N06S4-07 Data sheet ( Hoja de datos )
| Número de pieza | IPD90N06S4-07 | |
| Descripción | Power-Transistor | |
| Fabricantes | Infineon | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IPD90N06S4-07 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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OptiMOS®-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
• Ultra Low RDSon
IPD90N06S4-07
Product Summary
V DS
R DS(on),max
ID
60 V
6.9 mΩ
90 A
PG-TO252-3-11
Type
IPD90N04S6-07
Package
Marking
PG-TO252-3-11 4N0607
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I D T C=25°C, V GS=10V
T C=100°C, V GS=10V2)
Pulsed drain current1)
I D,pulse T C=25°C
Avalanche energy, single pulse1) E AS I D=45A
Avalanche current, single pulse I AS -
Gate source voltage
V GS
-
Power dissipation
P tot T C=25°C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
Value
90
63
360
67
90
±20
79
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
−
Rev. 1.0
page 1
2009-03-24
1 page  
IPD90N06S4-07
5 Typ. output characteristics
I D = f(V DS); T j = 25 °C
parameter: V GS
360
320
10 V
280
240
200
160
120
80
40
0
01234
V DS [V]
7 Typ. transfer characteristics
I D = f(V GS); V DS = 6V
parameter: T j
360
320
280
240
200
160
120
80
40
0
23456
V GS [V]
6 Typ. drain-source on-state resistance
R DS(on) = f(I D); T j = 25 °C
parameter: V GS
20
5V
6V
18
8V
16
7V
8V
14
7V
12
10
6V
8
5V
6
10 V
56
4
0
90 180 270
I D [A]
8 Typ. drain-source on-state resistance
R DS(on) = f(T j); I D = 90 A; V GS = 10 V
360
-55 °C
25 °C
175 °C
78
11
10
9
8
7
6
5
4
-60 -20 20 60 100 140 180
T j [°C]
Rev. 1.0
page 5
2009-03-24
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IPD90N06S4-07.PDF ] | |
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