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Numéro de référence | TC58NVG4S2FTA00 | ||
Description | 16 GBIT (2G x 8 BIT) CMOS NAND E2PROM | ||
Fabricant | Toshiba | ||
Logo | |||
TOSHIBA CONFIDENTIAL TC58NVG4S2FTA00
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
16 GBIT (2G × 8 BIT) CMOS NAND E2PROM
DESCRIPTION
The TC58NVG4S2F is a single 3.3V 16 Gbit (18,621,267,968 bits) NAND Electrically Erasable and
Programmable Read-Only Memory (NAND E2PROM) organized as (8192 + 576) bytes × 64 pages × 4148blocks.
The device has two 8768-byte static registers which allow program and read data to be transferred between the
register and the memory cell array in 8768-byte increments. The Erase operation is implemented in a single block
unit (512 Kbytes + 36 Kbytes: 8768 bytes × 64 pages).
The TC58NVG4S2F is a serial-type memory device which utilizes the I/O pins for both address and data
input/output as well as for command inputs. The Erase and Program operations are automatically executed making
the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still
cameras and other systems which require high-density non-volatile memory data storage.
FEATURES
• Organization
Memory cell array
Register
Page size
Block size
x8
8768 × 259.25K × 8
8768 × 8
8768 bytes
(512K + 36K) bytes
• Modes
Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy,
Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read
• Mode control
Serial input/output
Command control
• Number of valid blocks
Min 4016 blocks
Max 4148 blocks
• Power supply
VCC = 2.7V to 3.6V
• Access time
Cell array to register TBD µs max
Serial Read Cycle
25 ns min (CL=50pF)
• Program/Erase time
Auto Page Program
Auto Block Erase
TBD µs/page typ.
TBD ms/block typ.
• Operating current
Read (25 ns cycle)
Program (avg.)
Erase (avg.)
Standby
30 mA max.
30 mA max
30 mA max
50 µA max
• Package
TSOP I 48-P-1220-0.50 (Weight: 0.53 g typ.)
• TBD bit ECC for each 512Byte is required.
1 2009-10-02C
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Pages | Pages 30 | ||
Télécharger | [ TC58NVG4S2FTA00 ] |
No | Description détaillée | Fabricant |
TC58NVG4S2FTA00 | 16 GBIT (2G x 8 BIT) CMOS NAND E2PROM | Toshiba |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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