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IPP90N04S4-02 fiches techniques PDF

Infineon - Power-Transistor

Numéro de référence IPP90N04S4-02
Description Power-Transistor
Fabricant Infineon 
Logo Infineon 





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IPP90N04S4-02 fiche technique
OptiMOS®-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
IPB90N04S4-02
IPI90N04S4-02, IPP90N04S4-02
Product Summary
V DS
R DS(on),max (SMD version)
ID
40 V
2.1 m
90 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type
IPB90N04S4-02
IPI90N04S4-02
IPP90N04S4-02
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Marking
4N0402
4N0402
4N0402
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25 °C, V GS=10 V
T C=100°C, V GS=10V2)
Pulsed drain current2)
I D,pulse T C=25°C
Avalanche energy, single pulse2) E AS I D=45A
Avalanche current, single pulse I AS -
Gate source voltage
V GS
-
Power dissipation
P tot T C=25°C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
Value
90
90
360
475
90
±20
150
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
Rev. 1.1
page 1
2010-07-01

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