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Numéro de référence | IPB120N04S4-02 | ||
Description | Power-Transistor | ||
Fabricant | Infineon | ||
Logo | |||
1 Page
OptiMOS®-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
IPB120N04S4-02
IPI120N04S4-02, IPP120N04S4-02
Product Summary
V DS
R DS(on),max (SMD version)
ID
40 V
1.8 mΩ
120 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type
IPB120N04S4-02
IPI120N04S4-02
IPP120N04S4-02
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Marking
4N0402
4N0402
4N0402
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25°C, V GS=10V
T C=100°C, V GS=10V2)
Pulsed drain current2)
I D,pulse T C=25°C
Avalanche energy, single pulse2) E AS I D=60A
Avalanche current, single pulse I AS -
Gate source voltage
V GS
-
Power dissipation
P tot T C=25°C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
Value
120
120
480
480
120
±20
158
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
Rev. 1.0
page 1
2010-04-06
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Pages | Pages 9 | ||
Télécharger | [ IPB120N04S4-02 ] |
No | Description détaillée | Fabricant |
IPB120N04S4-01 | Power-Transistor | Infineon |
IPB120N04S4-02 | Power-Transistor | Infineon |
IPB120N04S4-04 | Power-Transistor | Infineon |
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