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PDF IPD90N04S4-03 Data sheet ( Hoja de datos )
| Número de pieza | IPD90N04S4-03 | |
| Descripción | Power-Transistor | |
| Fabricantes | Infineon | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IPD90N04S4-03 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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OptiMOS®-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
IPD90N04S4-03
Product Summary
V DS
R DS(on),max
ID
40 V
3.2 mΩ
90 A
PG-TO252-3-313
Type
IPD90N04S4-03
Package
Marking
PG-TO252-3-313 4N0403
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25°C, V GS=10V
T C=100°C, V GS=10V2)
Pulsed drain current2)
I D,pulse T C=25°C
Avalanche energy, single pulse2) E AS I D=45A
Avalanche current, single pulse I AS -
Gate source voltage
V GS
-
Power dissipation
P tot T C=25°C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
Value
90
90
360
185
90
±20
94
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
Rev. 1.0
page 1
2010-04-13
1 page  
IPD90N04S4-03
5 Typ. output characteristics
I D = f(V DS); T j = 25 °C
parameter: V GS
360
10 V
320
280
240
200
160
120
80
40
0
012
V DS [V]
7 Typ. transfer characteristics
I D = f(V GS); V DS = 6V
parameter: T j
350
6 Typ. drain-source on-state resistance
R DS(on) = f(I D); T j = 25 °C
parameter: V GS
10
5.5 V
7V 9
6V
8
6.5 V
6V
5.5 V
5V
7
6
5
4
3
2
6.5 V
7V
10 V
1
34
0 40 80 120 160
I D [A]
8 Typ. drain-source on-state resistance
R DS(on) = f(T j); I D = 90 A; V GS = 10 V
5
300 4.5
250
200
150
100
50
0
3
175 °C
25 °C
-55 °C
456
V GS [V]
4
3.5
3
2.5
2
7
1.5
-60 -20 20
60 100 140 180
T j [°C]
Rev. 1.0
page 5
2010-04-13
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IPD90N04S4-03.PDF ] | |
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