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NCE3420 fiches techniques PDF

NCE Power Semiconductor - NCE N-Channel Enhancement Mode Power MOSFET

Numéro de référence NCE3420
Description NCE N-Channel Enhancement Mode Power MOSFET
Fabricant NCE Power Semiconductor 
Logo NCE Power Semiconductor 





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NCE3420 fiche technique
http://www.ncepower.com
Pb Free Product
NCE3420
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE3420 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 1.8V. This device is suitable for use as a
uni-directional or bi-directional load switch.
General Features
VDS = 20V,ID = 6A
RDS(ON) < 35m@ VGS=2.5V
RDS(ON) < 27m@ VGS=4.5V
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
D
G
S
Schematic diagram
Marking and pin Assignment
Application
Uni-directional Load switch
Bi-directional Load switch
SOT-23 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
3420
NCE3420
SOT-23
Reel Size
Ø180mm
Tape width
8 mm
Quantity
3000 units
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current-Pulsed (Note 1)
ID
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
Limit
20
±10
6
30
1.25
-55 To 150
100
Unit
V
V
A
A
W
/W
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Zero Gate Voltage Drain Current
IDSS VDS=20V,VGS=0V
Min Typ Max Unit
20 22
--
-
1
V
μA
Wuxi NCE Power Semiconductor Co., Ltd
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