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JCST - N-Channel MOSFETS

Numéro de référence NCE8205
Description N-Channel MOSFETS
Fabricant JCST 
Logo JCST 





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NCE8205 fiche technique
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23-6L Plastic-Encapsulate MOSFETS
NCE8205 N-Channel MOSFETS
FEATURE
Low on-resistance
APPLICATIONS
Li-ion battery management applications
SOT-23-6L
Maximum ratings ( Ta=25unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Power Dissipation (note 1, Ta=25)
Maximum Power Dissipation (note 2, Tc=25)
Thermal Resistance from Junction to Ambient
Thermal Resistance from Junction to Case
Junction Temperature
Storage Temperature
Symbol
VDS
VGS
ID
PD
RθJA
RθJC
TJ
TSTG
Electrical characteristics (Ta=25unless otherwise noted)
Parameter
Symbol
Test Condition
Static Characteristics
Drain-source breakdown voltage
V(BR)DSS VGS = 0V, ID =250µA
Zero gate voltage drain current
IDSS VDS =18V,VGS = 0V
Gate-source leakage current
Drain-source on-resistance (note 3)
Gate threshold voltage
IGSS
RDS(on)
VGS(th)
VGS =±10V,VDS = 0V
VGS =4.5V,ID =6A
VGS =2.5V,ID=5A
VDS =VGS,ID =250µA
Source-drain diode characteristics
Forward on voltage (note 3)
VSD IS=1.25A,VGS=0V
Notes:
1. This test is performed with no heat sink at Ta=25.
2. This test is performed with infinite heat sink at Tc=25.
3. Pulse Test : Pulse Width300µs, Duty Cycle 2%.
Value
19
±10
6
0.35
1.1
357
114
150
-55~+150
Unit
V
V
A
W
W
/W
/W
Min Typ Max Unit
19 V
1 µA
±100 nA
27 m
37 m
0.45 1.2 V
1.2 V
B,Aug,2011

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