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NCE Power Semiconductor - NCE N-Channel Enhancement Mode Power MOSFET

Numéro de référence NCE2312
Description NCE N-Channel Enhancement Mode Power MOSFET
Fabricant NCE Power Semiconductor 
Logo NCE Power Semiconductor 





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NCE2312 fiche technique
http://www.ncepower.com
Pb Free Product
NCE2312
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE2312 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
battery protection or in other switching application.
General Features
VDS = 20V,ID = 4.5A
RDS(ON) < 40m@ VGS=2.5V
RDS(ON) < 33m@ VGS=4.5V
High power and current handing capability
Lead free product is acquired
Surface mount package
D
G
S
Schematic diagram
Marking and pin assignment
Application
Battery protection
Load switch
Power management
SOT-23 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
2312
NCE2312
SOT-23
Reel Size
Ø180mm
Tape width
8 mm
Quantity
3000 units
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
TA =25
TA =70
ID
Drain Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
Limit
20
±12
4.5
3.6
13.5
1.25
-55 To 150
100
Unit
V
V
A
A
W
/W
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Min Typ Max Unit
20 22
-
V
Wuxi NCE Power Semiconductor Co., Ltd
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