|
|
Numéro de référence | NCE4036F | ||
Description | NCE P-Channel Enhancement Mode Power MOSFET | ||
Fabricant | NCE Power Semiconductor | ||
Logo | |||
http://www.ncepower.com
Pb Free Product
NCE4036F
NCE P-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The NCE4036F uses advanced trench technology and design
to provide excellent RDS(ON) with low gate charge. It can be
used in a wide variety of applications.
GENERAL FEATURES
● VDS =-40V,ID =-36A
RDS(ON) <16mΩ @ VGS=-10V
RDS(ON) <23mΩ @ VGS=-4.5V
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability
Schematic diagram
Application
● Power switching application
● Hard Switched and High Frequency Circuits
● Uninterruptible Power Supply
Marking and pin Assignment
100% UIS TESTED!
100% ΔVds TESTED!
TO-220F top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
NCE4036F
NCE4036F
TO-220F
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Drain Current
Maximum Power Dissipation
IDM
PD
Derating factor
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
-40
±20
-36
-25
-140
33
0.26
-55 To 150
Unit
V
V
A
A
A
W
W/℃
℃
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0
|
|||
Pages | Pages 7 | ||
Télécharger | [ NCE4036F ] |
No | Description détaillée | Fabricant |
NCE4036F | NCE P-Channel Enhancement Mode Power MOSFET | NCE Power Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |