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NCE Power Semiconductor - NCE P-Channel Enhancement Mode Power MOSFET

Numéro de référence NCE4036F
Description NCE P-Channel Enhancement Mode Power MOSFET
Fabricant NCE Power Semiconductor 
Logo NCE Power Semiconductor 





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NCE4036F fiche technique
http://www.ncepower.com
Pb Free Product
NCE4036F
NCE P-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The NCE4036F uses advanced trench technology and design
to provide excellent RDS(ON) with low gate charge. It can be
used in a wide variety of applications.
GENERAL FEATURES
VDS =-40V,ID =-36A
RDS(ON) <16m@ VGS=-10V
RDS(ON) <23m@ VGS=-4.5V
High density cell design for ultra low Rdson
Fully characterized Avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Special process technology for high ESD capability
Schematic diagram
Application
Power switching application
Hard Switched and High Frequency Circuits
Uninterruptible Power Supply
Marking and pin Assignment
100% UIS TESTED!
100% ΔVds TESTED!
TO-220F top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
NCE4036F
NCE4036F
TO-220F
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
ID (100)
Pulsed Drain Current
Maximum Power Dissipation
IDM
PD
Derating factor
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
-40
±20
-36
-25
-140
33
0.26
-55 To 150
Unit
V
V
A
A
A
W
W/
Wuxi NCE Power Semiconductor Co., Ltd
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