|
|
Numéro de référence | NCE4007S | ||
Description | NCE P-Channel Enhancement Mode Power MOSFET | ||
Fabricant | NCE Power Semiconductor | ||
Logo | |||
http://www.ncepower.com
Pb Free Product
NCE4007S
NCE P-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The NCE4007S uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
GENERAL FEATURES
● VDS =-40V,ID =-6.2A
RDS(ON) <25mΩ @ VGS=-10V
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
● Excellent package for good heat dissipation
Schematic diagram
Application
● Power switching application
● Hard Switched and High Frequency Circuits
● DC-DC Converter
Marking and pin Assignment
SOP-8 top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
4007
NCE4007S
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
IDM
PD
TJ,TSTG
Thermal Characteristic
Thermal Resistance ,Junction-to-Ambient(Note 2)
RθJA
Limit
-40
±20
-6.2
-4
40
2.5
-55 To 150
50
Unit
V
V
A
A
A
W
℃
℃/W
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0
|
|||
Pages | Pages 7 | ||
Télécharger | [ NCE4007S ] |
No | Description détaillée | Fabricant |
NCE4007S | NCE P-Channel Enhancement Mode Power MOSFET | NCE Power Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |