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NCE Power Semiconductor - NCE P-Channel Enhancement Mode Power MOSFET

Numéro de référence NCE4435
Description NCE P-Channel Enhancement Mode Power MOSFET
Fabricant NCE Power Semiconductor 
Logo NCE Power Semiconductor 





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NCE4435 fiche technique
Pb Free Product
NCE4435
NCE P-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The NCE4435 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 4.5V.
GENERAL FEATURES
VDS = -30V,ID = -9.1A
RDS(ON) < 35m@ VGS=-4.5V
RDS(ON) < 20m@ VGS=-10V
D
G
S
Schematic diagram
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
Marking and pin Assignment
Application
Battery Switch
Load switch
Power management
SOP-8 top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
4435
NCE4435
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
Limit
-30
±20
-9.1
-50
3.1
-55 To 150
40
Unit
V
V
A
A
W
/W
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
Min Typ Max Unit
-30 -33
-
V
Wuxi NCE Power Semiconductor Co., Ltd
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