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Numéro de référence | NCE4403 | ||
Description | NCE P-Channel Enhancement Mode Power MOSFET | ||
Fabricant | NCE Power Semiconductor | ||
Logo | |||
http://www.ncepower.com
Pb Free Product
NCE4403
NCE P-Channel Enhancement Mode Power MOSFET
Description
The NCE4403 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
● VDS =-30V,ID =-6.1A
RDS(ON) < 46mΩ @ VGS=-10V
RDS(ON) < 61mΩ @ VGS=-4.5V
RDS(ON) <117mΩ @ VGS=-2.5V
Schematic diagram
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Fast switching speed
Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply
Marking and pin assignment
SOP-8 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
4403
NCE4403
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
IDM
PD
TJ,TSTG
Limit
-30
±12
-6.1
-4.3
30
2.5
-55 To 150
Unit
V
V
A
A
A
W
℃
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0
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Pages | Pages 7 | ||
Télécharger | [ NCE4403 ] |
No | Description détaillée | Fabricant |
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