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NCE3007S fiches techniques PDF

NCE Power Semiconductor - NCE P-Channel Enhancement Mode Power MOSFET

Numéro de référence NCE3007S
Description NCE P-Channel Enhancement Mode Power MOSFET
Fabricant NCE Power Semiconductor 
Logo NCE Power Semiconductor 





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NCE3007S fiche technique
http://www.ncepower.com
Pb Free Product
NCE3007S
NCE P-Channel Enhancement Mode Power MOSFET
Description
The NCE3007S uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in load switch and battery protection
applications.
General Features
VDS =-30V,ID =-6.5A
RDS(ON) < 46m@ VGS=-10V
RDS(ON) < 72m@ VGS=-4.5V
Schematic diagram
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Application
Load switch
battery protection
Marking and pin assignment
100% UIS Tested
100% Rg Tested
SOP-8 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
3007
NCE3007S
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
ID (100)
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
IDM
PD
TJ,TSTG
Limit
-30
±20
-6.5
-4.5
-30
3.1
-55 To 150
Unit
V
V
A
A
A
W
Wuxi NCE Power Semiconductor Co., Ltd
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