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NCE Power Semiconductor - NCE P-Channel Enhancement Mode Power MOSFET

Numéro de référence NCE4953A
Description NCE P-Channel Enhancement Mode Power MOSFET
Fabricant NCE Power Semiconductor 
Logo NCE Power Semiconductor 





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NCE4953A fiche technique
http://www.ncepower.com
Pb Free Product
NCE4953A
NCE P-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The NCE4953A uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 4.5V. This device is suitable for use as a
load switch or in PWM applications.
GENERAL FEATURES
VDS = -30V,ID = -5.3A
RDS(ON) < 100m@ VGS=-4.5V
RDS(ON) < 49m@ VGS=-10V
D1
G1
G2
D2
S1 S2
Schematic diagram
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
Marking and pin Assignment
Application
PWM applications
Load switch
Power management
SOP-8 top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
4953A
NCE4953A
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
Limit
-30
±20
-5.3
-20
2.6
-55 To 150
49
Unit
V
V
A
A
W
/W
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
Zero Gate Voltage Drain Current
IDSS VDS=-24V,VGS=0V
Min Typ Max Unit
-30 -33
--
-
-1
V
μA
Wuxi NCE Power Semiconductor Co., Ltd
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