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PDF FIR3441AG Data sheet ( Hoja de datos )
| Número de pieza | FIR3441AG | |
| Descripción | P-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | First Semiconductor | |
| Logotipo |  |
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P-Channel Enhancement Mode Power MOSFET
Description
The FIR3441AG uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
load switch or in PWM applications.
General Features
• VDS = -30V,ID = -4.4A
RDS(ON) < 65mΩ @ VGS=-4.5V
RDS(ON) < 50mΩ @ VGS=-10V
• High Power and current handing capability
• Lead free product is acquired
• Surface Mount Package
Application
• PWM applications
• Load switch
• Power management
FIR3441AG
Top vlew SOT-23
D
G
S
D
G
S
Schematic diagram
Marking and pin Assignment
Package Marking And Ordering Information
Device Marking
Device
Device Package
3401A
NCE3401A
SOT-23
Reel Size
Ø180mm
Tape width
8 mm
Quantity
3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
ID
IDM
PD
TJ,TSTG
Limit
-30
±12
-4.4
-30
1.3
-55 To 150
Unit
V
V
A
A
W
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
95 ℃/W
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
Zero Gate Voltage Drain Current
IDSS VDS=-24V,VGS=0V
Min Typ Max Unit
-30 -33
--
-
-1
V
μA
@ 2010 Copyright By American First Semiconductor
Page 1/6
1 page  
FIR3441AG
Vds Drain-Source Voltage (V)
Figure 13 Safe Operation Area
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
www.First-semi.com
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5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet FIR3441AG.PDF ] | |
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