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Numéro de référence | NCE4503 | ||
Description | SOP8 Plastic-Encapsulate MOSFETS | ||
Fabricant | TY Semiconductor | ||
Logo | |||
Product specification
SOP8 Plastic-Encapsulate MOSFETS
NCE4503
N-and P-Channel Enhancement Mode Power MOSFET
DESCRIPTION
Advance Power MOSFETs provide the designer with the best
combination of fast switching, ruggedized device desigh, low
on-resistance and cost -effectiveness.
The SOP8 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
MARKING: 4503
SOP8
S1 1 z
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
5 D2
Maximum ratings ( Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a
Pulsed Drain Current b
Power Dissipation
Ta=25℃
Ta=70℃
Thermal Resistance from Junction to Ambient
Operating Junction Temperature
Storage Temperature
Notes :
a. These tests are performed with infinite heat sink.
b.Pulse width by Max.junction temperature.
Symbol
VDS
VGS
ID
IDM
PD
RθJA
TJ
TSTG
N-Channel
P-Channel
30 -30
±20 ±20
6.9 -6.3
5.5 -5
20 -20
2.0
62.5
150
-55 ~+150
Unit
V
A
W
℃/W
℃
http://www.twtysemi.com
4008-318-123
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Pages | Pages 4 | ||
Télécharger | [ NCE4503 ] |
No | Description détaillée | Fabricant |
NCE4503 | SOP8 Plastic-Encapsulate MOSFETS | TY Semiconductor |
NCE4503S | N and P-Channel Enhancement Mode Power MOSFET | NCE Power Semiconductor |
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