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Numéro de référence | NCE4953 | ||
Description | NCE P-Channel Enhancement Mode Power MOSFET | ||
Fabricant | NCE Power Semiconductor | ||
Logo | |||
1 Page
http://www.ncepower.com
Pb Free Product
NCE4953
NCE P-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The NCE4953 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 4.5V. This device is suitable for use as a
load switch or in PWM applications.
GENERAL FEATURES
● VDS = -30V,ID = -5.1A
RDS(ON) < 85mΩ @ VGS=-4.5V
RDS(ON) < 53mΩ @ VGS=-10V
D1
G1
G2
D2
S1 S2
Schematic diagram
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Marking and pin Assignment
Application
●PWM applications
●Load switch
●Power management
SOP-8 top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
NCE4953
NCE4953
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
ID
IDM
PD
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BVDSS
IDSS
VGS=0V ID=-250μA
VDS=-24V,VGS=0V
Limit
-30
±20
-5.1
-20
2.5
-55 To 150
Unit
V
V
A
A
W
℃
50 ℃/W
Min Typ Max Unit
-30 V
-1 μA
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0
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Pages | Pages 7 | ||
Télécharger | [ NCE4953 ] |
No | Description détaillée | Fabricant |
NCE4953 | NCE P-Channel Enhancement Mode Power MOSFET | NCE Power Semiconductor |
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