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Numéro de référence | NCE40P70K | ||
Description | NCE P-Channel Enhancement Mode Power MOSFET | ||
Fabricant | NCE Power Semiconductor | ||
Logo | |||
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http://www.ncepower.com
Pb Free Product
NCE40P70K
NCE P-Channel Enhancement Mode Power MOSFET
Description
The NCE40P70K uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge .This
device is well suited for high current load applications.
General Features
● VDS =-40V,ID =-70A
RDS(ON) <10mΩ @ VGS=-10V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability
Schematic diagram
Application
● Power switch
● Load switch in high current applications
● DC/DC converters
Marking and pin assignment
100% UIS TESTED!
100% ∆Vds TESTED!
TO-252-2L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE40P70K
NCE40P70K
TO-252-2L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Drain Current
Maximum Power Dissipation
IDM
PD
Derating factor
Single pulse avalanche energy (Note 5)
EAS
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
-40
±20
-70
-35
-115
65
0.52
1020
-55 To 150
Unit
V
V
A
A
A
W
W/℃
mJ
℃
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0
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Pages | Pages 7 | ||
Télécharger | [ NCE40P70K ] |
No | Description détaillée | Fabricant |
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