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IPD70N10S3-12 fiches techniques PDF

Infineon Technologies - Power-Transistor

Numéro de référence IPD70N10S3-12
Description Power-Transistor
Fabricant Infineon Technologies 
Logo Infineon Technologies 





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IPD70N10S3-12 fiche technique
OptiMOS®-T Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested
IPD70N10S3-12
Product Summary
V DS
R DS(on),max
ID
100 V
11.1 mW
70 A
PG-TO252-3-11
Type
IPD70N10S3-12
Package
Marking
PG-TO252-3-11 QN1012
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I D T C=25°C, V GS=10V
T C=100°C, V GS=10V1)
Pulsed drain current1)
I D,pulse T C=25°C
Avalanche energy, single pulse1) E AS I D=35A
Avalanche current, single pulse
I AS
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
70
48
280
410
70
±20
125
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
Rev. 1.1
page 1
2011-10-06

PagesPages 9
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