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PDF IPD70P04P4L-08 Data sheet ( Hoja de datos )
| Número de pieza | IPD70P04P4L-08 | |
| Descripción | Power-Transistor | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IPD70P04P4L-08 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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OptiMOS®-P2 Power-Transistor
Features
• P-channel - Logic Level - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• 100% Avalanche tested
IPD70P04P4L-08
Product Summary
V DS
R DS(on)
ID
-40 V
7.8 mW
-70 A
PG-TO252-3-313
Type
IPD70P04P4L-08
Package
Marking
PG-TO252-3-313 4P04L08
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
ID
T C=25°C,
V GS=-10V
T C=100°C,
V GS=-10V1)
Pulsed drain current1)
Avalanche energy, single pulse1)
I D,pulse
E AS
T C=25°C
I D=-35A
Avalanche current, single pulse
I AS -
Gate source voltage
V GS
-
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
Rev. 1.0
page 1
Value
-70
-55
-280
24
-70
±162)
75
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
2011-03-14
1 page  
IPD70P04P4L-08
5 Typ. output characteristics
I D = f(V DS); T j = 25 °C
parameter: -V GS
280
10V
210
140
70
0
01234
-V DS [V]
7 Typ. transfer characteristics
I D = f(V GS); V DS = -6V
parameter: T j
280
6 Typ. drain-source on-state resistance
R DS(on) = (I D); T j = 25 °C
parameter: -V GS
60
2.8V 3V
5V 55
3.5V
50
45
40
4.5V
35
30
25
4V
20
3.5V
3V
56
15
10
5
0
0
20 40
-I D [A]
4V
4.5V
5V
10V
60
8 Typ. drain-source on-state resistance
R DS(on) = f(T j); I D = -70 A; V GS = -10 V
13
12
210
11
10
140
9
70
0
2
175 °C
25 °C
-55 °C
34
-V GS [V]
Rev. 1.0
5
8
7
6
6 -60 -20 20 60 100 140 180
T j [°C]
page 5
2011-03-14
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IPD70P04P4L-08.PDF ] | |
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