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IPP70N04S4-06 fiches techniques PDF

Infineon Technologies - Power-Transistor

Numéro de référence IPP70N04S4-06
Description Power-Transistor
Fabricant Infineon Technologies 
Logo Infineon Technologies 





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IPP70N04S4-06 fiche technique
OptiMOS®-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
IPB70N04S4-06
IPI70N04S4-06, IPP70N04S4-06
Product Summary
V DS
R DS(on),max (SMD version)
ID
40 V
6.2 m
70 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type
IPB70N04S4-06
IPI70N04S4-06
IPP70N04S4-06
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Marking
4N0406
4N0406
4N0406
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I D T C=25°C, V GS=10V
T C=100°C, V GS=10V2)
Pulsed drain current1)
I D,pulse T C=25°C
Avalanche energy, single pulse1) E AS I D=35A
Avalanche current, single pulse I AS -
Gate source voltage
V GS
-
Power dissipation
P tot T C=25°C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
Value
70
51
280
72
70
±20
58
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
Rev. 1.0
page 1
2010-04-13

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