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IPB70N10S3L-12 fiches techniques PDF

Infineon Technologies - Power-Transistor

Numéro de référence IPB70N10S3L-12
Description Power-Transistor
Fabricant Infineon Technologies 
Logo Infineon Technologies 





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IPB70N10S3L-12 fiche technique
OptiMOS®-T Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested
IPB70N10S3L-12
IPI70N10S3L-12, IPP70N10S3L-12
Product Summary
V DS
R DS(on),max (SMD version)
ID
100 V
12 mW
70 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type
IPB70N10S3L-12
IPI70N10S3L-12
IPP70N10S3L-12
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Marking
3N10L12
3N10L12
3N10L12
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I D T C=25 °C, V GS=10 V
T C=100 °C,
V GS=10 V1)
Pulsed drain current1)
Avalanche energy, single pulse1)
I D,pulse
E AS
T C=25 °C
I D=35A
Avalanche current, single pulse
Gate source voltage2)
I AS
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
70
48
280
410
70
±20
125
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
Rev. 1.2
page 1
2012-05-10

PagesPages 9
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