DataSheetWiki


IPB77N06S2-12 fiches techniques PDF

Infineon Technologies - Power-Transistor

Numéro de référence IPB77N06S2-12
Description Power-Transistor
Fabricant Infineon Technologies 
Logo Infineon Technologies 





1 Page

No Preview Available !





IPB77N06S2-12 fiche technique
OptiMOS® Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
Green package (lead free)
• Ultra low Rds(on)
• 100% Avalanche tested
IPB77N06S2-12
IPP77N06S2-12
Product Summary
V DS
R DS(on),max (SMD version)
ID
55 V
11.7 m
77 A
PG-TO263-3-2
PG-TO220-3-1
Type
IPB77N06S2-12
IPP77N06S2-12
Package
PG-TO263-3-2
PG-TO220-3-1
Ordering Code Marking
SP0002-18173 2N0612
SP0002-18172 2N0612
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25 °C, V GS=10 V
T C=100 °C,
V GS=10 V2)
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse2) E AS I D= 77 A
Gate source voltage4)
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
77
56
308
280
±20
158
-55 ... +175
55/175/56
Unit
A
mJ
V
W
°C
Rev. 1.0
page 1
2005-12-27

PagesPages 8
Télécharger [ IPB77N06S2-12 ]


Fiche technique recommandé

No Description détaillée Fabricant
IPB77N06S2-12 Power-Transistor Infineon Technologies
Infineon Technologies

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche