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IPB80N06S2L-H5 fiches techniques PDF

Infineon Technologies - Power-Transistor

Numéro de référence IPB80N06S2L-H5
Description Power-Transistor
Fabricant Infineon Technologies 
Logo Infineon Technologies 





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IPB80N06S2L-H5 fiche technique
OptiMOS® Power-Transistor
Features
• N-channel Logic Level - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
Green package (lead free)
• Ultra low Rds(on)
• 100% Avalanche tested
IPB80N06S2L-H5
IPP80N06S2L-H5
Product Summary
V DS
R DS(on),max (SMD version)
ID
55 V
4.7 m
80 A
PG-TO263-3-2
PG-TO220-3-1
Type
IPB80N06S2L-H5
IPP80N06S2L-H5
Package
Ordering Code Marking
PG-TO263-3-2 SP0002-19068 2N06LH5
PG-TO220-3-1 SP0002-19067 2N06LH5
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
Pulsed drain current2)
Avalanche energy, single pulse2)
Gate source voltage4)
Power dissipation
Operating and storage temperature
I D T C=25 °C, V GS=10 V
T C=100 °C,
V GS=10 V2)
I D,pulse T C=25 °C
E AS I D= 80 A
V GS
P tot T C=25 °C
T j, T stg
Value
80
80
320
700
±20
300
-55 ... +175
Unit
A
mJ
V
W
°C
Rev. 1.0
page 1
2005-12-27

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