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Número de pieza | BGU6102 | |
Descripción | Wideband silicon low-noise amplifier MMIC | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BGU6102 (archivo pdf) en la parte inferior de esta página. Total 20 Páginas | ||
No Preview Available ! BGU6102
Wideband silicon low-noise amplifier MMIC
Rev. 3 — 13 July 2012
Product data sheet
1. Product profile
1.1 General description
The BGU6102 MMIC is an unmatched wideband MMIC featuring an integrated bias,
enable function and wide supply voltage. BGU6102 is part of a family of three products
(BGU6101, BGU6102 and BGU6104) and is optimized for 2 mA operation.
1.2 Features and benefits
Supply voltage range from 1.5 V to 5 V
Current range up to 20 mA at 3 V and 40 mA at 5 V supply voltage
NFmin of 0.7 dB
Applicable between 40 MHz and 4 GHz
Integrated temperature-stabilized bias for easy design
Bias current configurable with external resistor
Power-down mode current consumption < 6 A
ESD protection on all pins up to 3 kV HBM
Small 6-pin leadless package 2.0 mm 1.3 mm 0.35 mm
1.3 Applications
FM radio
Mobile TV, CMMB
ISM
Wireless security
RKE, TPMS
AMR, ZigBee, Bluetooth
WiFi, WLAN (2.4 GHz)
Low current applications
1.4 Quick reference data
Table 1. Quick reference data
Tamb = 25 C; VCC = 3.0 V; ICC(tot) = 3.0 mA; VENABLE 1.2 V unless otherwise specified. All
measurements done on characterization board without matching, de-embedded up to the pins.
Symbol Parameter
Conditions
Min Typ Max Unit
s212
insertion power gain
f = 450 MHz
f = 900 MHz
- 18.5 -
- 16.5 -
dB
dB
NFmin minimum noise figure
f = 2400 MHz; ICC(tot) = 6 mA
f = 450 MHz
f = 900 MHz
- 14.0 -
- 0.7 -
- 0.8 -
dB
dB
dB
f = 2400 MHz; ICC(tot) = 6 mA
- 1.2 -
dB
1 page NXP Semiconductors
BGU6102
Wideband silicon low-noise amplifier MMIC
Table 8. Dynamic characteristics …continued
Tamb = 25 C; VCC = 3.0 V; VENABLE 1.2 V unless otherwise specified. All measurements done on
characterization board without matching, de-embedded up to the pins.
Symbol Parameter
Conditions
Min Typ Max Unit
150 MHz frequency
s212 insertion power gain
MSG maximum stable gain
f = 150 MHz
ICC(tot) = 2 mA
ICC(tot) = 3 mA
ICC(tot) = 6 mA
ICC(tot) = 10 mA
ICC(tot) = 20 mA
f = 150 MHz
-
-
-
-
-
16.0 -
19.0 -
24.5 -
27.5 -
31.0 -
dB
dB
dB
dB
dB
NFmin
PL(1dB)
IP3O
minimum noise figure
output power at 1 dB gain compression
output third-order intercept point
ICC(tot) = 2 mA
ICC(tot) = 3 mA
ICC(tot) = 6 mA
ICC(tot) = 10 mA
ICC(tot) = 20 mA
f = 150 MHz
ICC(tot) = 2 mA
ICC(tot) = 3 mA
ICC(tot) = 6 mA
ICC(tot) = 10 mA
ICC(tot) = 20 mA
f = 150 MHz
ICC(tot) = 2 mA
ICC(tot) = 3 mA
ICC(tot) = 6 mA
ICC(tot) = 10 mA
ICC(tot) = 20 mA
f = 150 MHz
ICC(tot) = 2 mA
ICC(tot) = 3 mA
ICC(tot) = 6 mA
ICC(tot) = 10 mA
ICC(tot) = 20 mA
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
27.5 -
29.0 -
32.0 -
34.0 -
36.0 -
0.8 -
0.7 -
0.8 -
0.8 -
1.0 -
6.5 -
4.5 -
0.0 -
3.5 -
9.0 -
3.0 -
5.5 -
10.5 -
14.5 -
19.5 -
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
BGU6102
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 13 July 2012
© NXP B.V. 2012. All rights reserved.
5 of 20
5 Page NXP Semiconductors
BGU6102
Wideband silicon low-noise amplifier MMIC
Table 8. Dynamic characteristics …continued
Tamb = 25 C; VCC = 3.0 V; VENABLE 1.2 V unless otherwise specified. All measurements done on
characterization board without matching, de-embedded up to the pins.
Symbol Parameter
Conditions
Min Typ Max Unit
3500 MHz frequency
s212 insertion power gain
MSG maximum stable gain
f = 3500 MHz
ICC(tot) = 2 mA
ICC(tot) = 3 mA
ICC(tot) = 6 mA
ICC(tot) = 10 mA
ICC(tot) = 20 mA
f = 3500 MHz
-
-
-
-
-
5.5 -
7.5 -
10.5 -
12.0 -
13.5 -
dB
dB
dB
dB
dB
NFmin
PL(1dB)
IP3O
minimum noise figure
output power at 1 dB gain compression
output third-order intercept point
ICC(tot) = 2 mA
ICC(tot) = 3 mA
ICC(tot) = 6 mA
ICC(tot) = 10 mA
ICC(tot) = 20 mA
f = 3500 MHz
ICC(tot) = 2 mA
ICC(tot) = 3 mA
ICC(tot) = 6 mA
ICC(tot) = 10 mA
ICC(tot) = 20 mA
f = 3500 MHz
ICC(tot) = 2 mA
ICC(tot) = 3 mA
ICC(tot) = 6 mA
ICC(tot) = 10 mA
ICC(tot) = 20 mA
f = 3500 MHz
ICC(tot) = 2 mA
ICC(tot) = 3 mA
ICC(tot) = 6 mA
ICC(tot) = 10 mA
ICC(tot) = 20 mA
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
16.0 -
17.5 -
19.0 -
18.5 -
18.5 -
2.3 -
2.2 -
1.9 -
1.8 -
1.9 -
7.5 -
5.5 -
0.5 -
4.5 -
9.5 -
2.5 -
6.0 -
11.5 -
16.5 -
20.0 -
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
BGU6102
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 13 July 2012
© NXP B.V. 2012. All rights reserved.
11 of 20
11 Page |
Páginas | Total 20 Páginas | |
PDF Descargar | [ Datasheet BGU6102.PDF ] |
Número de pieza | Descripción | Fabricantes |
BGU6101 | Wideband silicon low-noise amplifier MMIC | NXP Semiconductors |
BGU6102 | Wideband silicon low-noise amplifier MMIC | NXP Semiconductors |
BGU6104 | Wideband silicon low-noise amplifier MMIC | NXP Semiconductors |
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