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PDF JHW5N50 Data sheet ( Hoja de datos )
| Número de pieza | JHW5N50 | |
| Descripción | N-CHANNEL MOSFET | |
| Fabricantes | Jin-ec Electronic | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de JHW5N50 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
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Shanghai Jin-ec Electronic&Technology Co., Ltd
N 沟道增强型场效应晶体管
N-CHANNEL MOSFET
JHW5N50封装 Package
主要参数 MAIN CHARACTERISTICS
ID 5 A
VDSS 500 V
Rdson（@Vgs=10V） 1. Ω
Qg 32 nC
用途
z 高频开关电源
z 电子镇流器
z UPS 电源
APPLICATIONS
z High efficiency switch
mode power supplies
z Electronic lamp ballasts
based on half bridge
z UPS
产品特性
z低栅极电荷
z低 Crss (典型值 17pF)
z开关速度快
z产品全部经过雪崩测试
z高抗 dv/dt 能力
zRoHS 产品
FEATURES
zLow gate charge
zLow Crss (typical 17pF )
zFast switching
z100% avalanche tested
zImproved dv/dt capability
zRoHS product
1/10
1 page  
特征曲线 ELECTRICAL CHARACTERISTICS (curves)
JHW5N50
On-Region Characteristics
Transfer Characteristics
VGS
Top 15V
10V
8V
10 7V
6.5V
6V
5.5V
Bottom 5V
10
25℃
150℃
1
Notes：
1 1. 250μs pulse test
2. TC=25℃
1 10
VDS [V]
On-Resistance Variation vs.
Drain Current and Gate Voltage
Notes：
1.250μs pulse test
2.VDS=40V
0.1
2 4 6 8 10
VGS [V]
Body Diode Forward Voltage Variation
vs. Source Current and Temperature
2.0
1.9
1.8
1.7 VGS=10V
1.6
1.5 VGS=20V
1.4
1.3
1.2 Note ：Tj=25℃
1.1
02468
ID [A]
10
25℃
1
150℃
Notes：
1. 250μs pulsetest
2. VGS=0V
0.1
0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD[V]
Capacitance Characteristics
Gate Charge Characteristics
12
VDS=400V
10
VDS=250V
8 VDS=100V
6
4
2
0
0 4 8 12 16 20 24 28 32 36
Qg Toltal Gate Charge [nC]
5/10
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet JHW5N50.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| JHW5N50 | N-CHANNEL MOSFET | Jin-ec Electronic |
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| JHW5N50R | N-CHANNEL MOSFET | Jin-ec Electronic |
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