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PDF MBR600100CTR Data sheet ( Hoja de datos )
| Número de pieza | MBR600100CTR | |
| Descripción | Silicon Power Schottky Diode | |
| Fabricantes | GeneSiC | |
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Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types from 45 V to 100 V VRRM
• Not ESD Sensitive
MBR60045CT thru MBR600100CTR
VRRM = 45 V - 100 V
IF(AV) = 600 A
Twin Tower Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
MBR60045CT(R) MBR60060CT(R) MBR60080CT(R) MBR600100CT(R) Unit
Repetitive peak reverse
voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
VRRM
VRMS
VDC
Tj
Tstg
45
32
45
-55 to 150
-55 to 150
60
42
60
-55 to 150
-55 to 150
80
57
80
-55 to 150
-55 to 150
100
70
100
-55 to 150
-55 to 150
V
V
V
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
MBR60045CT(R) MBR60060CT(R) MBR60080CT(R) MBR600100CT(R) Unit
Average forward current
(per pkg)
Peak forward surge
current (per leg)
IF(AV)
IF,SM
Maximum forward
voltage (per leg)
VF
Reverse current at rated
DC blocking voltage
(per leg)
IR
Thermal characteristics
Thermal resistance,
junction-case, per leg
RΘJC
TC = 125 °C
tp = 8.3 ms, half sine
IF = 300 A, Tj = 25 °C
Tj = 25 °C
Tj = 100 °C
Tj = 150 °C
600
4000
0.75
1
10
50
0.28
600
4000
0.80
1
10
50
0.28
600
4000
0.84
1
10
50
0.28
600
4000
0.84
1
10
50
0.28
A
A
V
mA
°C/W
www.genesicsemi.com/silicon-products/schottky-rectifiers/
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet MBR600100CTR.PDF ] | |
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