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Inchange Semiconductor - NPN Transistor - 2SD2562

Numéro de référence D2562
Description NPN Transistor - 2SD2562
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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D2562 fiche technique
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD2562
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 150V(Min)
·High DC Current Gain-
: hFE= 5000( Min.) @(IC= 10A, VCE= 4V)
·Low Collector Saturation Voltage-
: VCE(sat)= 2.5V(Max)@ (IC= 10A, IB=B 10mA)
·Complement to Type 2SB1649
APPLICATIONS
·Designed for series regulator and general purpose
applications.
.iscsemi.cnABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
wwwVCBO
Collector-Base Voltage
150 V
VCEO Collector-Emitter Voltage
150 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous
15 A
IB Base Current-Continuous
Collector Power Dissipation
PC @TC=25
TJ Junction Temperature
Tstg Storage Temperature
1A
85 W
150
-55~150
isc Websitewww.iscsemi.cn
www.DataSheet.in

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