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PDF IRFB7440GPBF Data sheet ( Hoja de datos )
| Número de pieza | IRFB7440GPBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Applications
l Brushed Motor drive applications
l BLDC Motor drive applications
l Battery powered circuits
l Half-bridge and full-bridge topologies
l Synchronous rectifier applications
l Resonant mode power supplies
l OR-ing and redundant power switches
l DC/DC and AC/DC converters
l DC/AC Inverters
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
l Halogen-Free
StrongIRFET
IRFB7440GPbF
HEXFET® Power MOSFET
D VDSS
40V
RDS(on) typ.
2.0m
cG max. 2.5m
ID 208A
S
ID (Package Limited)
120A
G
Gate
D
DS
G
TO-220AB
IRFB7440GPbF
D
D ra in
S
Source
Base Part Number
IRFB7440GPbF
Package Type
TO-220
Standard Pack
Form
Quantity
Tube
50
Orderable Part Number
IRFB7440GPbF
7.0
ID = 100A
6.0
5.0
4.0 TJ = 125°C
3.0
2.0
TJ = 25°C
1.0
4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
240
200 Limited By Package
160
120
80
40
0
25 50 75 100 125 150 175
TC , Case Temperature (°C)
Fig 2. Maximum Drain Current vs. Case Temperature
1 www.irf.com © 2013 International Rectifier
July 11, 2013
1 page  
1000
100 TJ = 175°C
10
TJ = 25°C
1
VGS = 0V
0.1
0.0 0.5 1.0 1.5 2.0
VSD, Source-to-Drain Voltage (V)
Fig 9. Typical Source-Drain Diode
Forward Voltage
50
49 Id = 5.0mA
2.5
48
47
46
45
44
43
42
41
40
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Temperature ( °C )
Fig 11. Drain-to-Source Breakdown Voltage
40
30
20
IRFB7440GPbF
10000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100μsec
100
1msec
Limited by
10 package
10msec
1 Tc = 25°C
Tj = 175°C
Single Pulse
0.1
0.1 1
DC
10
100
VDS, Drain-to-Source Voltage (V)
Fig 10. Maximum Safe Operating Area
0.8
VDS= 0V to 32V
0.6
0.4
0.2
0.0
0 5 10 15 20 25 30 35 40 45
VDS, Drain-to-Source Voltage (V)
Fig 12. Typical COSS Stored Energy
VGS = 5.5V
VGS = 6.0V
VGS = 7.0V
VGS = 8.0V
VGS =10V
10
0
0 100 200 300 400 500 600 700 800
ID, Drain Current (A)
Fig 13. Typical On-Resistance vs. Drain Current
5 www.irf.com © 2013 International Rectifier
July 11, 2013
5 Page | ||
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