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2MBI550VJ-170-50 Datasheet دیتاشیت PDF دانلود

دیتاشیت - Fuji Electric - IGBT Module

شماره قطعه 2MBI550VJ-170-50
شرح مفصل IGBT Module
تولید کننده Fuji Electric 
آرم Fuji Electric 


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2MBI550VJ-170-50 شرح
http://www.fujielectric.com/products/semiconductor/
2MBI550VJ-170-50
IGBT Modules
IGBT MODULE (V series)
1700V / 550A / 2 in one package
Features
High speed switching
Voltage drive
Low Inductance module structure
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Industrial machines, such as Welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at TC=25°C unless otherwise specified)
Items
Collector-Emitter voltage
Gate-Emitter voltage
Symbols
VCES
VGES
IC
Collector current
IC pulse
-IC
-IC pulse
Collector power dissipation
PC
Junction temperature
Tj
Operating junction temperature (under switching conditions) Tjop
Storage temperature
Tstg
Isolation voltage
between terminal and copper base (*1)
between thermistor and others (*2)
Viso
Mounting (*3)
-
Screw torque
Terminals (*4)
-
PC-Board (*5)
-
Conditions
Continuous
1ms
1ms
1 device
TC=25°C
TC=100°C
AC : 1min.
Maximum ratings
1700
±20
750
550
1100
550
1100
3750
175
150
-40 ~ 125
3400
3.5
4.5
0.6
Units
V
V
A
W
°C
VAC
Nm
Note *1: All terminals should be connected together during the test.
Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test.
Note *3: Recommendable Value : 2.5-3.5 Nm (M5)
Note *4: Recommendable Value : 3.5-4.5 Nm (M6)
Note *5: Recommendable Value : 0.4-0.6 Nm (M2.5)
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
Resistance
B value
Symbols
ICES
IGES
VGE (th)
VCE (sat)
(terminal)
VCE (sat)
(chip)
Cies
ton
tr
tr (i)
toff
tf
VF
(terminal)
VF
(chip)
trr
R
B
Conditions
VGE = 0V, VCE = 1700V
VCE = 0V, VGE = ±20V
VCE = 20V, IC = 550mA
Tj=25°C
Tj=125°C
VGE = 15V
Tj=150°C
IC = 550A
Tj=25°C
Tj=125°C
Tj=150°C
VCE = 10V, VGE = 0V, f = 1MHz
VCC = 900V
IC = 550A
VGE = ±15V
RG = 3.3Ω
VGE = 0V
IF = 550A
IF = 550A
T = 25°C
T = 100°C
T = 25/50°C
Tj=25°C
Tj=125°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=150°C
Characteristics
min. typ. max.
- - 3.0
- - 600
6.0 6.5 7.0
- 3.00 3.45
- 3.55 -
- 3.60 -
- 2.15 2.60
- 2.70 -
- 2.80 -
- 40 -
- 1000 -
- 500 -
- 120 -
- 1300 -
- 100 -
- 2.80 3.25
- 3.10 -
- 3.05 -
- 1.95 2.40
- 2.25 -
- 2.20 -
- 250 -
- 5000 -
465 495 520
3305 3375 3450
Units
mA
nA
V
V
nF
nsec
V
nsec
Ω
K
Thermal resistance characteristics
Items
Symbols Conditions
Thermal resistance(1device)
Contact thermal resistance (1device) (*6)
Rth(j-c)
Rth(c-f)
Inverter IGBT
Inverter FWD
with Thermal Compound
Note *6: This is the value which is defined mounting on the additional cooling fin with thermal compound.
1
Characteristics
min. typ. max.
- - 0.04
- - 0.06
- 0.0167 -
Units
°C/W

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