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1MBI1004F-120L-50 fiches techniques PDF

Fuji Electric - IGBT Module

Numéro de référence 1MBI1004F-120L-50
Description IGBT Module
Fabricant Fuji Electric 
Logo Fuji Electric 





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1MBI1004F-120L-50 fiche technique
http://www.fujielectric.com/products/semiconductor/
1MBI100U4F-120L-50
IGBT MODULE (U series)
1200V / 100A / 1 in one package
IGBT Modules
Features
High speed switching
Voltage drive
Low Inductance module structure
Applications
Inverter DB for Motor Drive
AC and DC Servo Drive Amplifier (DB)
Active PFC
Industrial machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Items
Collector-Emitter voltage
Gate-Emitter voltage
Symbols
VCES
VGES
Conditions
Ic Continuous
Collector current
Ic pulse
-Ic
-Ic pulse
Collector power dissipation
Pc
Reverse voltage for FWD
VR
Forword current for FWD
IF
IF pulse
Junction temperature
Tj
Storage temperature
Tstg
Isolation voltage Between terminal and copper base (*1) Viso
Screw torque
Mounting (*2)
Terminals (*3)
-
Note *1: All terminals should be connected together when isolation test will be done.
Note *2: Recommendable Value : 2.5 to 3.5 Nm (M5 or M6)
Note *3: Recommendable Value : 2.5 to 3.5 Nm (M5)
1ms
1ms
1 device
Continuous
1ms
AC : 1min.
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
Maximum ratings
1200
±20
150
100
300
200
50
100
540
1200
150
300
+150
-40~+125
2500
3.5
Units
V
V
A
W
V
A
°C
°C
VAC
Nm
1

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