DataSheetWiki


SBAW56LT1G fiches techniques PDF

ON Semiconductor - Dual Switching Diode Common Anode

Numéro de référence SBAW56LT1G
Description Dual Switching Diode Common Anode
Fabricant ON Semiconductor 
Logo ON Semiconductor 





1 Page

No Preview Available !





SBAW56LT1G fiche technique
BAW56LT1G,
SBAW56LT1G,
BAW56LT3G,
SBAW56LT3G
Dual Switching Diode
Common Anode
Features
AECQ101 Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS (EACH DIODE)
Rating
Symbol Value
Unit
Reverse Voltage
Forward Current
Peak Forward Surge Current
NonRepetitive Peak Forward Current
t = 1 ms (Note 3)
VR
IF
IFM(surge)
IFSM
70
200
500
4
V
mA
mA
A
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR5 Board PD 225 mW
(Note 1) TA = 25°C
Derate above 25°C
1.8 mW/°C
Thermal Resistance,
JunctiontoAmbient
RqJA
556 °C/W
Total Device Dissipation
Alumina Substrate,
(Note 2) TA = 25°C
Derate above 25°C
PD 300 mW
2.4 mW/°C
Thermal Resistance,
JunctiontoAmbient
RqJA
417 °C/W
Junction and Storage Temperature
TJ, Tstg
55 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
3. Square Wave; Tj = 25°C.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
SOT23 (TO236)
CASE 318
STYLE 12
ANODE
3
CATHODE
1
2
CATHODE
MARKING DIAGRAM
A1 M G
G
1
A1 = Device Code
M = Date Code*
G = PbFree Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping
BAW56LT1G
SOT23
(PbFree)
3,000 /
Tape & Reel
SBAW56LT1G
SOT23
(PbFree)
3,000 /
Tape & Reel
BAW56LT3G
SOT23
(PbFree)
10,000 /
Tape & Reel
SBAW56LT3G
SOT23
(PbFree)
10,000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
September, 2012 Rev. 8
1
Publication Order Number:
BAW56LT1/D

PagesPages 4
Télécharger [ SBAW56LT1G ]


Fiche technique recommandé

No Description détaillée Fabricant
SBAW56LT1G Dual Switching Diode Common Anode ON Semiconductor
ON Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche