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Numéro de référence | MBM29F040C-90 | ||
Description | 4M (512K X 8) BIT FLASH MEMORY | ||
Fabricant | Fujitsu Media Devices | ||
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1 Page
FUJITSU SEMICONDUCTOR
DATA SHEET
FLASH MEMORY
CMOS
4M (512K × 8) BIT
DS05-20842-4E
MBM29F040C-55/-70/-90
s FEATURES
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www.DataSheet4U.com
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Single 5.0 V read, program and erase
Minimizes system level power requirements
Compatible with JEDEC-standard commands
Uses same software commands as E2PROMs
Compatible with JEDEC-standard byte-wide pinouts
32-pin PLCC (Package suffix: PD)
32-pin TSOP(I) (Package suffix: PF)
32-pin TSOP(I) (Package suffix: PFTN – Normal Bend Type, PFTR – Reversed Bend Type)
Minimum 100,000 write/erase cycles
High performance
55 ns maximum access time
Sector erase architecture
8 equal size sectors of 64K bytes each
Any combination of sectors can be concurrently erased. Also supports full chip erase.
Embedded Erase™ Algorithms
Automatically pre-programs and erases the chip or any sector
Embedded Program™ Algorithms
Automatically writes and verifies data at specified address
Data Polling and Toggle Bit feature for detection of program or erase cycle completion
Low VCC write inhibit ≤ 3.2 V
Sector protection
Hardware method disables any combination of sectors from write or erase operations
Erase Suspend/Resume
Suspends the erase operation to allow a read data in another sector within the same device
Embedded Erase™, Embedded Program™ and ExpressFlash™ are trademarks of Advanced Micro Devices, Inc.
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Pages | Pages 30 | ||
Télécharger | [ MBM29F040C-90 ] |
No | Description détaillée | Fabricant |
MBM29F040C-90 | 4M (512K X 8) BIT FLASH MEMORY | Fujitsu Media Devices |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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