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IRF750 Datasheet دیتاشیت PDF دانلود

دیتاشیت - Fairchild Semiconductor - Advanced Power MOSFET

شماره قطعه IRF750
شرح مفصل Advanced Power MOSFET
تولید کننده Fairchild Semiconductor 
آرم Fairchild Semiconductor 


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IRF750 شرح
$GYDQFHG 3RZHU 026)(7
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current: 10µA (Max.) @ VDS = 400V
Low RDS(ON): 0.254(Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25°C)
Continuous Drain Current (TC=100°C)
Drain Current-Pulsed
(1)
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
(2)
Avalanche Current
(1)
Repetitive Avalanche Energy
(1)
Peak Diode Recovery dv/dt
(3)
Total Power Dissipation (TC=25°C)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
Thermal Resistance
Symbol
RθJC
RθCS
RθJA
Characteristic
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
IRF750
BVDSS = 400 V
RDS(on) = 0.3
ID = 15 A
TO-220
1
2
3
1.Gate 2. Drain 3. Source
Value
400
15
9.5
60
±30
1157
15
15.6
4.0
156
1.25
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
Typ.
--
0.5
--
Max.
0.8
--
62.5
Units
°C/W
Rev. B
©1999 Fairchild Semiconductor Corporation

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