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Fairchild Semiconductor - N-Channel MOSFET

Numéro de référence 8N50NZ
Description N-Channel MOSFET
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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8N50NZ fiche technique
FDP8N50NZ / FDPF8N50NZ
N-Channel UniFETTM II MOSFET
500 V, 8 A, 850 m
October 2013
Features
• RDS(on) = 770 m(Typ.) @ VGS = 10 V, ID = 4 A
• Low Gate Charge (Typ. 14 nC)
• Low Crss (Typ. 5 pF)
• 100% Avalanche Tested
• Improve dv/dt Capability
• ESD Improved Capability
• RoHS Compliant
Applications
• LCD/LED TV
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
Description
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on advanced planar stripe and DMOS
technology. This advanced MOSFET family has the smallest
on-state resistance among the planar MOSFET, and also
provides superior switching performance and higher avalanche
energy strength. In addition, internal gate-source ESD diode
allows UniFET II MOSFET to withstand over 2kV HBM surge
stress. This device family is suitable for switching power
converter applications such as power factor correction (PFC),
flat panel display (FPD) TV power, ATX and electronic lamp
ballasts.
D
G
GDS TO-220 GDS TO-220F
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RJC
RJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDP8N50NZ FDPF8N50NZ
500
±25
8 8*
4.8 4.8*
(Note 1)
32
32*
(Note 2)
122
(Note 1)
8
(Note 1)
13
(Note 3)
10
130 40.3
1 0.3
-55 to +150
300
FDP8N50NZ FDPF8N50NZ
0.96 3.1
62.5 62.5
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2010 Fairchild Semiconductor Corporation
FDP8N50NZ / FDPF8N50NZ Rev. C2
1
www.fairchildsemi.com

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