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Sanyo - PNP Transistor - 2SA1433

Numéro de référence A1433
Description PNP Transistor - 2SA1433
Fabricant Sanyo 
Logo Sanyo 





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A1433 fiche technique
Ordering number:EN3471
PNP Epitaxial Planar Silicon Transistor
2SA1433
High-Definition CRT Display Applications
Features
· High fT (Gain-Bandwidth Product).
· Small reverse transfer capacitance (Cre=1.3pF).
· Adoption of FBET process.
Package Dimensions
unit:mm
2006A
[2SA1433]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Base-to-Collector Time Contact
Output Capacitance
Reverse Transfer Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Votage
ICBO
IEBO
hFE
fT
rbb, 'cc
Cob
Cre
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCB=–40V, IE=0
VEB=–3V, IC=0
VCE=–10V, IC=–10mA
VCE=–10V, IC=–10mA
VCE=–10V, IC=–10mA
VCB=–10V, f=1MHz
VCB=–10V, f=1MHz
IC=–20mA, IB=–2mA
IC=–20mA, IB=–2mA
IC=–10µA, IE=0
IC=–1mA, RBE=
IE=–10µA, IC=0
* : The 2SA1433 is classified by 10mA hFE as follows :
60 D 120 100 E 200 160 F 320
hFE rank : D, E, F
EIAJ : SC-51
SANYO : MP
B : Base
C :Collector
E : Emitter
Ratings
–70
–60
–4
–50
–100
900
150
–55 to +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
Ratings
min typ
60*
350 700
8
1.7
1.3
–70
–60
–4
max
(–)0.1
(–)1.0
320*
–0.6
–1.0
Unit
µA
µA
MHz
pF
pF
V
V
V
V
V
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71598HA (KT)/5280TA (KOTO) No.3471-1/2

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