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Toshiba Semiconductor - PNP Transistor - 2SA1431

Numéro de référence A1431
Description PNP Transistor - 2SA1431
Fabricant Toshiba Semiconductor 
Logo Toshiba Semiconductor 





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A1431 fiche technique
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1431
Strobe Flash Applications
Medium Power Amplifier Applications
2SA1431
Unit: mm
High DC current gain and excellent hFE linearity
: hFE(1) = 100 to 320 (VCE = 2 V, IC = 0.5 A)
: hFE(2) = 70 (min) (VCE = 2 V, IC = 4 A)
Low saturation voltage: VCE (sat) = 1.0 V (max)
(IC = 4 A, IB = 0.1 A)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
DC
Collector current
Pulsed
(Note 1)
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
35
20
8
5
8
0.5
1000
150
55 to 150
Note 1: Pulse width = 10 ms (max), duty cycle = 30% (max)
Unit
V
V
V
A
A
mW
°C
°C
JEDEC
JEITA
TOSHIBA
2-7D101A
Weight: 0.2 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
ICBO
IEBO
V (BR) CEO
V (BR) EBO
VCB = 35 V, IE = 0
VEB = 8 V, IC = 0
IC = 10 mA, IB = 0
IE = 1 mA, IC = 0
hFE (1)
(Note 2)
VCE = 2 V, IC = 0.5 A
hFE (2)
VCE (sat)
VCE = 2 V, IC = 4 A
IC = 4 A, IB = 0.1 A
VBE VCE = 2 V, IC = 4 A
fT VCE = 2 V, IC = 0.5 A
Cob VCB = 10 V, IE = 0, f = 1 MHz
Note 2: hFE (1) classification O: 100 to 200, Y: 160 to 320
Min Typ. Max Unit
― ― −100 nA
― ― −100 nA
20
V
8 ― ―
V
100 320
70 ― ―
― −1.0
V
― −1.5
V
170 MHz
62 pF
1 2004-07-07

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