DataSheetWiki


K3277-01L fiches techniques PDF

Fuji Electric - MOSFET ( Transistor ) - 2SK3277-01L

Numéro de référence K3277-01L
Description MOSFET ( Transistor ) - 2SK3277-01L
Fabricant Fuji Electric 
Logo Fuji Electric 





1 Page

No Preview Available !





K3277-01L fiche technique
> Features
- High Current
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- Avalanche Rated
2SK3272-01L,S
Trench Gate MOSFET
N-channel MOS-FET
60V 6,5m±80A 135W
> Outline Drawing
> Applications
- Motor Control
- General Purpose Power Amplifier
- DC-DC converters
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item
Symbol
Rating
Drain-Source-Voltage
Continous Drain Current
Pulsed Drain Current
Gate-Source-Voltage
V DS
ID
I D(puls)
VGS
60
±80
±320
+30 / -20
Maximum Avalanche Energy
Max. Power Dissipation
Operating and Storage Temperature Range
E AV
PD
T ch
T stg
613
135
150
-55 ~ +150
* L=0,13mH, VCC=24V
Unit
V
A
A
V
mJ*
W
°C
°C
> Equivalent Circuit
- Electrical Characteristics (TC=25°C), unless otherwise specified
Item
Symbol
Test conditions
Drain-Source Breakdown-Voltage
BV DSS
ID=1mA
VGS=0V
Gate Threshhold Voltage
V GS(th)
ID=10mA
VDS=VGS
Zero Gate Voltage Drain Current
I DSS
VDS=60V
Tch=25°C
VGS=0V
Tch=125°C
Gate Source Leakage Current
I GSS
VGS=±30V
VDS=0V
Drain Source On-State Resistance
R DS(on)
ID=40A
VGS=40V
Min.
60
2,5
Typ. Max.
3,0
1,0
10,0
10
5,0
3,5
100,0
500,0
100
6,5
Unit
V
V
µA
µA
nA
m
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On-Time ton (ton=td(on)+tr)
Turn-Off-Time toff (ton=td(off)+tf)
Avalanche Capability
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
g fs
C iss
C oss
C rss
t d(on)
tr
t d(off)
tf
I AV
V SD
t rr
Q rr
ID=40A
VDS=10V
VDS=25V
VGS=0V
f=1MHz
VCC=30V
VGS=10V
ID=80A
RGS=10
L = 100µH Tch=25°C
IF=80A VGS=0V Tch=25°C
IF=50A VGS=0V
-dIF/dt=100A/µs Tch=25°C
25 50
9000
1250
700
50
200
150
135
80
1,0
85
0,25
S
pF
pF
pF
ns
ns
ns
ns
A
1,5 V
ns
µC
- Thermal Characteristics
Item
Thermal Resistance
Symbol
R th(ch-a)
R th(ch-c)
Test conditions
channel to ambient
channel to case
Min. Typ. Max. Unit
75,0 °C/W
0,926 °C/W

PagesPages 2
Télécharger [ K3277-01L ]


Fiche technique recommandé

No Description détaillée Fabricant
K3277-01L MOSFET ( Transistor ) - 2SK3277-01L Fuji Electric
Fuji Electric
K3277-01S MOSFET ( Transistor ) - 2SK3277-01S Fuji Electric
Fuji Electric

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche