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FS450R12KE3 Datasheet دیتاشیت PDF دانلود

دیتاشیت - Infineon - IGBT-Module

شماره قطعه FS450R12KE3
شرح مفصل IGBT-Module
تولید کننده Infineon 
آرم Infineon 


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FS450R12KE3 شرح
TechnischeInformation/TechnicalInformation
IGBT-Module
IGBT-modules
FS450R12KE3
-EconoPACK™+ModulmitTrench/FeldstopIGBT3undHighEfficiencyDiode
-EconoPACK™+withtrench/fieldstopIGBT3andEmitterControlledHighEfficiencydiode
IGBT,Wechselrichter/IGBT,Inverter
HöchstzulässigeWerte/MaximumRatedValues
Kollektor-Emitter-Sperrspannung
Collector-emittervoltage
Tvj = 25°C
Kollektor-Dauergleichstrom
ContinuousDCcollectorcurrent
TC = 80°C, Tvj max = 150°C
TC = 25°C, Tvj max = 150°C
PeriodischerKollektor-Spitzenstrom
Repetitivepeakcollectorcurrent
tP = 1 ms
Gesamt-Verlustleistung
Totalpowerdissipation
TC = 25°C, Tvj max = 150
Gate-Emitter-Spitzenspannung
Gate-emitterpeakvoltage

VCES 
IC nom
IC

ICRM 
Ptot 
VGES 
1200
450
600
900
2100
+/-20
V

A
A
A
W
V
CharakteristischeWerte/CharacteristicValues
Kollektor-Emitter-Sättigungsspannung
Collector-emittersaturationvoltage
IC = 450 A, VGE = 15 V
IC = 450 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
Gate-Schwellenspannung
Gatethresholdvoltage
IC = 18,0 mA, VCE = VGE, Tvj = 25°C
Gateladung
Gatecharge
VGE = -15 V ... +15 V
InternerGatewiderstand
Internalgateresistor
Tvj = 25°C
Eingangskapazität
Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Rückwirkungskapazität
Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Kollektor-Emitter-Reststrom
Collector-emittercut-offcurrent
VCE = 1200 V, VGE = 0 V, Tvj = 25°C
Gate-Emitter-Reststrom
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
Einschaltverzögerungszeit,induktiveLast
Turn-ondelaytime,inductiveload
IC = 450 A, VCE = 600 V
VGE = ±15 V
RGon = 1,6
Tvj = 25°C
Tvj = 125°C
Anstiegszeit,induktiveLast
Risetime,inductiveload
IC = 450 A, VCE = 600 V
VGE = ±15 V
RGon = 1,6
Tvj = 25°C
Tvj = 125°C
Abschaltverzögerungszeit,induktiveLast
Turn-offdelaytime,inductiveload
IC = 450 A, VCE = 600 V
VGE = ±15 V
RGoff = 1,6
Tvj = 25°C
Tvj = 125°C
Fallzeit,induktiveLast
Falltime,inductiveload
IC = 450 A, VCE = 600 V
VGE = ±15 V
RGoff = 1,6
Tvj = 25°C
Tvj = 125°C
EinschaltverlustenergieproPuls
Turn-onenergylossperpulse
IC = 450 A, VCE = 600 V, LS = 80 nH
VGE = ±15 V
RGon = 1,6
Tvj = 25°C
Tvj = 125°C
AbschaltverlustenergieproPuls
Turn-offenergylossperpulse
IC = 450 A, VCE = 600 V, LS = 80 nH
VGE = ±15 V
RGoff = 1,6
Tvj = 25°C
Tvj = 125°C
Kurzschlußverhalten
SCdata
VGE 15 V, VCC = 900 V
VCEmax = VCES -LsCE ·di/dt
tP 10 µs, Tvj = 125°C
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
proIGBT/perIGBT
Wärmewiderstand,GehäusebisKühlkörper proIGBT/perIGBT
Thermalresistance,casetoheatsink
λPaste=1W/(m·K)/λgrease=1W/(m·K)
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions

VCE sat
VGEth
QG
RGint
Cies
Cres
ICES
IGES
td on
tr
td off
tf
Eon
Eoff
ISC
RthJC
RthCH
Tvj op
min. typ. max.
1,70 2,15
2,00
V
V
5,0 5,8 6,5 V
 4,30  µC
 1,7 
 32,0  nF
 1,50  nF
  5,0 mA
  400 nA
0,25
 0,30 
µs
µs
0,09
 0,10 
µs
µs
0,55
 0,65 
µs
µs
0,13
 0,16 
µs
µs
mJ
 33,0  mJ
mJ
 65,0  mJ
 1800 
A
  0,06 K/W
 0,048
K/W
-40  125 °C
preparedby:MB
approvedby:WR
dateofpublication:2013-10-02
revision:3.1
1

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