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Sanyo Semicon Device - N- Channel Silicon MOS FET Load S/W USE

Numéro de référence FTD2012
Description N- Channel Silicon MOS FET Load S/W USE
Fabricant Sanyo Semicon Device 
Logo Sanyo Semicon Device 





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FTD2012 fiche technique
FTD2012
N- Channel Silicon MOS FET
Load S/W USE
Features
• Low ON-state resistance.
• 4V drive.
• Mount height of 1.1mm.
• Complex Type enabling high density mount
Absolute Maximum Ratings / Ta=25°C
Drain to Source Voltage
Gate to Source Voltage
Drain Current(DC)
Drain Current(Pulse)
Allowable power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
PW10µS, dutycycle1%
Mounted on ceramic board
(1000mm2 ! 0.8mm) 1unit
Mounted on ceramic board
(1000mm2 ! 0.8mm)
30
±20
4.5
20
0.8
1.3
150
--55 to +150
Electrical Characteristics / Ta=25°C
Drain to Source Breakdown Voltage
V(BR)DSS ID=1mA , VGS=0
min
30
Zero Gate Voltage Drain Current
IDSS
VDS=30V , VGS=0
Gate to Source Leakage Current
IGSS
VGS=±16V , VDS=0
Cutoff Voltage
VGS(off)
VDS=10V , ID=1mA
1.0
Forward Transfer Admittance
| yfs |
VDS=10V , ID=4.5A
6.3
Static Drain to Source
RDS(on) 1 ID=4.5A , VGS=10V
On State Resistance
RDS(on) 2 ID=4A , VGS=4V
Input Capacitance
Ciss VDS=10V , f=1MHz
Output Capacitance
Coss VDS=10V , f=1MHz
Reverse Transfer Capacitance
Crss VDS=10V , f=1MHz
Turn-ON Delay Time
td(on)
See Specified Test Circuit
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
tr
td(off)
tf
Qg
"
"
"
Gate Source Charge
Qgs VDS=10V, VGS=10V, ID=4.5A
Gate Drain Charge
Qgd
Diode Forward Voltage
Marking : D2012
Switching Time Test Circuit
VIN
10V
0V
VIN
VDD=15V
ID=4.5A
RL=3.3
VSD
IS=4.5A , VGS=0
Electrical Connection
D2 S2 S2 G2
Case Outline
TSSOP8(unit:mm)
3.0
0.65
8 7 65
PW=10µS
D.C.1%
D VOUT
TENTATIVE
unit
V
V
A
A
W
W
°C
°C
typ max unit
V
1 µA
±10 µA
2.4 V
9S
26 34 m
43 60 m
750 pF
170 pF
105 pF
12 ns
56 ns
73 ns
38 ns
18 nC
2.3 nC
3.2 nC
0.8 1.2 V
0.425
G
P.G 50
FTD2012
S
D1 S1 S1 G1
1 23 4
0.25
Specifications and information herein are subject to change without notice.
SANYO Electric Co., Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10,1 Chome, Ueno, taito-ku, 110 JAPAN
0.125
1 : Drain1
2 : Source1
3 : Source1
4 : Gate1
5 : Gate2
6 : Source2
7 : Source2
8 : Drain2
990702TM2fXHD

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