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PDF FTD1011 Data sheet ( Hoja de datos )
| Número de pieza | FTD1011 | |
| Descripción | Ultrahigh-Speed Switching Applications | |
| Fabricantes | Sanyo Semicon Device | |
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Ordering number : ENN6593
FTD1011
P-Channel Silicon MOSFET
FTD1011
Ultrahigh-Speed Switching Applications
Features
• Low ON-resistance.
• 2.5V drive.
• Mount height of 1.1mm.
• Composite type, facilitating high-density mounting.
Package Dimensions
unit : mm
2155A
0.65
8
3.0
5
[FTD1011]
0.425
Specifications
Absolute Maximum Ratings at Ta=25°C
14
0.25
1 : Drain1
2 : Source1
3 : Source1
0.125 4 : Gate1
5 : Gate2
6 : Source2
7 : Source2
8 : Drain2
SANYO : TSSOP8
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (1000mm2!0.8mm)1unit
Mounted on a ceramic board (1000mm2!0.8mm)
Ratings
--20
±10
--3
--15
0.8
1.0
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Sourse Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Sourse on-State Resistance
Marking : D1011
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
ID=--1mA, VGS=0
VDS=--20V, VGS=0
VGS=±8V, VDS=0
VDS=--10V, ID=--1mA
VDS=--10V, ID=--3A
ID=--3A, VGS=--4V
ID=--2A, VGS=--2.5V
min
--20
--0.4
6
Ratings
typ
max
Unit
V
--1 µA
±10 µA
--1.4 V
8.8 S
50 65 mΩ
68 96 mΩ
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71400 TS IM TA-2725 No.6593-1/4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet FTD1011.PDF ] | |
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