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Numéro de référence | PBHV8560Z | ||
Description | 0.5 A NPN high-voltage low VCEsat (BISS) transistor | ||
Fabricant | NXP Semiconductors | ||
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PBHV8560Z
600 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor
13 March 2015
Product data sheet
1. General description
NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223
(SC-73) medium power Surface-Mounted Device (SMD) plastic package.
PNP complement: PBHV9560Z
2. Features and benefits
• Low collector-emitter saturation voltage VCEsat
• High collector current capability
• High collector current gain hFE at high IC
• AEC-Q101 qualified
3. Applications
• Electronic ballast for fluorescent lighting
• LED driver for LED chain module
• LCD backlighting
• High Intensity Discharge (HID) front lighting
• Automotive motor management
• Hook switch for wired telecom
• Switch Mode Power Supply (SMPS)
4. Quick reference data
Table 1.
Symbol
VCEO
IC
hFE
Quick reference data
Parameter
collector-emitter
voltage
collector current
DC current gain
Conditions
open base
VCE = 10 V; IC = 50 mA; Tamb = 25 °C
Min Typ Max Unit
- - 600 V
- - 0.5 A
70 135 -
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Pages | Pages 13 | ||
Télécharger | [ PBHV8560Z ] |
No | Description détaillée | Fabricant |
PBHV8560Z | 0.5 A NPN high-voltage low VCEsat (BISS) transistor | NXP Semiconductors |
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