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PBHV8560Z fiches techniques PDF

NXP Semiconductors - 0.5 A NPN high-voltage low VCEsat (BISS) transistor

Numéro de référence PBHV8560Z
Description 0.5 A NPN high-voltage low VCEsat (BISS) transistor
Fabricant NXP Semiconductors 
Logo NXP Semiconductors 





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PBHV8560Z fiche technique
PBHV8560Z
600 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor
13 March 2015
Product data sheet
1. General description
NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223
(SC-73) medium power Surface-Mounted Device (SMD) plastic package.
PNP complement: PBHV9560Z
2. Features and benefits
Low collector-emitter saturation voltage VCEsat
High collector current capability
High collector current gain hFE at high IC
AEC-Q101 qualified
3. Applications
Electronic ballast for fluorescent lighting
LED driver for LED chain module
LCD backlighting
High Intensity Discharge (HID) front lighting
Automotive motor management
Hook switch for wired telecom
Switch Mode Power Supply (SMPS)
4. Quick reference data
Table 1.
Symbol
VCEO
IC
hFE
Quick reference data
Parameter
collector-emitter
voltage
collector current
DC current gain
Conditions
open base
VCE = 10 V; IC = 50 mA; Tamb = 25 °C
Min Typ Max Unit
- - 600 V
- - 0.5 A
70 135 -
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