VS-10CTQ150-1PbF Datasheet PDF - Vishay
| Part Number | VS-10CTQ150-1PbF | |
| Description | High Performance Schottky Rectifier | |
| Manufacturers | Vishay | |
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VS-10CTQ150SPbF, VS-10CTQ150-1PbF
Vishay Semiconductors
High Performance Schottky Rectifier, 2 x 5 A
VS-10CTQ150SPbF
VS-10CTQ150-1PbF
Base
common
cathode
2
Base
common
cathode
2
2
1 Common 3
Anode cathode Anode
D2PAK
2
1 Common 3
Anode cathode Anode
TO-262
FEATURES
• 175 °C TJ operation
• Center tap configuration
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
IRM
TJ max.
Diode variation
EAS
D2PAK, TO-262
2x5A
150 V
0.93 V
7 mA at 125 °C
175 °C
Common cathode
5 mJ
DESCRIPTION
This center tap Schottky rectifier has been optimized for low
reverse leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF
TJ
Rectangular waveform
tp = 5 μs sine
5 Apk, TJ = 125 °C (per leg)
Range
VALUES
10
150
620
0.73
-55 to +175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
VS-10CTQ150SPbF
VS-10CTQ150-1PbF
150
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average
per leg
forward current, see fig. 5 per device
IF(AV)
Maximum peak one cycle non-repetitive
surge current per leg, see fig. 7
IFSM
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
EAS
IAR
TEST CONDITIONS
50 % duty cycle at TC = 155 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
VRRM applied
TJ = 25 °C, IAS = 1 A, L = 10 mH
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
VALUES
5
10
620
115
5
1
UNITS
A
A
mJ
A
Revision: 20-May-14
1 Document Number: 94116
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
ORDERING INFORMATION TABLE
VS-10CTQ150SPbF, VS-10CTQ150-1PbF
Vishay Semiconductors
Device code VS- 10 C T Q 150 S TRL PbF
1 2 3 456789
1 - Vishay Semiconductors product
2 - Current rating (10 A)
3 - Circuit configuration: C = common cathode
4 - T = TO-220
5 - Schottky “Q” series
6 - Voltage rating (150 = 150 V)
7-
S = D2PAK
-1 = TO-262
8 - None = tube (50 pieces)
TRL = tape and reel (left oriented - for D2PAK only)
TRR = tape and reel (right oriented - for D2PAK only)
9 - PbF = lead (Pb)-free
Dimensions
Part marking information
Packaging information
LINKS TO RELATED DOCUMENTS
www.vishay.com/doc?95014
www.vishay.com/doc?95008
www.vishay.com/doc?95032
Revision: 20-May-14
5 Document Number: 94116
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for VS-10CTQ150-1PbF electronic component. |
| Information | Total 8 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ VS-10CTQ150-1PbF.PDF Datasheet ] | |
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