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P11NM50N fiches techniques PDF

STMicroelectronics - STP11NM50N

Numéro de référence P11NM50N
Description STP11NM50N
Fabricant STMicroelectronics 
Logo STMicroelectronics 





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P11NM50N fiche technique
STD11NM50N
STF11NM50N, STP11NM50N
N-channel 500 V, 0.4 Ω, 8.5 A MDmesh™ II Power MOSFET
in DPAK, TO-220FP and TO-220
Features
Order codes
STD11NM50N
STF11NM50N
STP11NM50N
VDSS @TJmax
RDS(on)
max
550 V
< 0.47 Ω
ID
8.5 A
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Application
Switching applications
Description
These devices are made using the second
generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
3
1
DPAK
3
2
1
TO-220FP
3
2
1
TO-220
Figure 1. Internal schematic diagram
$
'
3
!-V
Table 1. Device summary
Order codes
STD11NM50N
STF11NM50N
STP11NM50N
Marking
11NM50N
11NM50N
11NM50N
Package
DPAK
TO-220FP
TO-220
Packaging
Tape and reel
Tube
Tube
November 2010
Doc ID 17156 Rev 3
1/16
www.st.com
16
http://www.Datasheet4U.com

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