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Número de pieza | THB6064AH | |
Descripción | Stepping Motor Driver IC | |
Fabricantes | Toshiba | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de THB6064AH (archivo pdf) en la parte inferior de esta página. Total 30 Páginas | ||
No Preview Available ! TB6564AHQ(THB6064AH)
TOSHIBA BiCD Integrated Circuit Silicon Monolithic
TB6564AHQ (THB6064AH)
PWM Chopper-Type bipolar
Stepping Motor Driver IC
The TB6564AHQ(THB6064AH) is a PWM chopper-type
sinusoidal micro-step bipolar stepping motor driver IC.
It supports 8 kind of excitation modes and forward/reverse mode
and is capable of low-vibration, high-performance drive of
2-phase bipolar type stepping motors using only a clock signal.
TB6564AHQ(THB6064AH)
Features
• Single-chip bipolar sinusoidal micro-step stepping motor
driver
Weight:
• Uses high withstand voltage BiCD process:
Ron (upper lower) = 0.4 Ω (typ.)
HZIP25-P-1.27: 9.86 g (typ.)
• Forward and reverse rotation control available
• Selectable phase drive (1/2,1/8,1/10, 1/16, 1/20, 1/32, 1/40, 1/64 step)
• Output withstand voltage: VDSS = 50 V
• Output current: IOUT = 4.5 A (absolute maximum ratings, peak, within 100ms)
IOUT = 4.0 A (operating range, maximal value)
• Packages: HZIP25-P-1.27
• Output monitor pins (DOWN / ALERT)
• Equipped with reset and enable pins
• Built-in thermal shutdown(TSD) and over-current detection(ISD) circuit
The TB6564AHQ(THB6064AH) is a Sn-Ag plated product including Pb.
The following conditions apply to solderability:
*Solderability
1. Use of Sn-37Pb solder bath
*solder bath temperature = 230°C
*dipping time = 5 seconds
*number of times = once
*use of R-type flux
2. Use of Sn-3.0Ag-0.5Cu solder bath
*solder bath temperature = 245°C
*dipping time = 5 seconds
*the number of times = once
*use of R-type flux
These ICs are highly sensitive to electrostatic discharge. When handling them, ensure that the environment is
protected against electrostatic discharge. Ensure also that the ambient temperature and relative humidity are
maintained at reasonable level.
ESD(Electro-Static Discharge) : HBM±1500V, MM±150V (design target value)
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2011-03-01
1 page TB6564AHQ(THB6064AH)
Electrical Characteristics (Ta = 25°C, VDD = 5V, VM = 24V)
Control circuit
Characteristic
Symbol
Test Condition
Min Typ. Max Unit
Input voltage
High
Low
Input hysteresis voltage
Input current
VDD supply current
VM supply current
Vref input
circuit
Input current
Divider ratio
Minimum CLK pulse width
VIN (H)
VIN (L)
VH
M1, M2, M3, CW/CCW, CLK,
RESET, ENABLE, DCY1, DCY2
2.0 ⎯ VDD
V
−0.2 ⎯
0.8
⎯ 400 ⎯ mV
IIN (H)
M1, M2, M3, CW/CCW, CLK,
RESET, ENABLE, DCY1, DCY2
VIN = 5.0 V
⎯ 55 80
μA
IIN (L)
VIN = 0 V
⎯⎯ 1
IDD1
IDD2
Output open,
RESET: H, ENABLE: H
M1:L, M2:L, M3:L (1/2-step mode)
RESET: L, ENABLE: H
⎯
⎯
3
2
7
mA
7
IDD3
RESET: L, ENABLE: L
⎯2
7
IM1
IM2
IIN(ref)
RESET: H/L, ENABLE: L
RESET: H/L, ENABLE: H
Vref=3.0V
⎯ 0.5 ⎯
mA
⎯1⎯
⎯ ⎯ 1 μA
Vref/VNF Maximum current : 100%
⎯ 3 ⎯⎯
tCLKH
tCLKL
2.3 ⎯ ⎯ μs
Output residual voltage
TSD operation temperature(Note)
VOL DOWN
IOL = 1 mA
VOL ALERT
TSD
(Design target value)
⎯ ⎯ 0.5 V
⎯ 170 ⎯
°C
TSD hysteresis (Note)
TSDhys (Design target value)
⎯ 40 ⎯ °C
Oscillation frequency
Oscillation frequency
Oscillation
circuit for
CLK monitor
Detection CLK
frequency
fosc1
fosc2
using built-in capacitor and resistor 50 100 200 kHz
ROSC = 51kΩ
2.6 4.0 5.4 MHz
fdetect using built-in capacitor and resistor 1.0 2.0 4.0 Hz
Note: Pre-shipment testing is not performed.
Output Block
Characteristic
Symbol
Test Condition
Output ON resistor
Output transistor switching
characteristics
Upper side
Output leakage current
Lower side
RonH + RonL IOUT = 4 A
tr RL = 2 Ω, VNF = 0 V,
tf CL = 15 pF
ILH
VM = 50 V
ILL
Min Typ. Max Unit
⎯ 0.4 0.6 Ω
⎯ 1.5 ⎯
⎯ 0.5 ⎯
μs
⎯―
5
μA
⎯―
5
5
V1.0
2011-03-01
5 Page TB6564AHQ(THB6064AH)
13.Thermal Shut-Down circuit
The IC incorporates a thermal shutdown circuit. When the junction temperature (Tj) reaches 170°C (typ.),
the output power MOSFETs are turned off.
The output power MOSFETs are turned on automatically.
The IC has 40°C of temperature hysteresis.
TSD = 170°C (target spec)
(Note)
ΔTSD = 40°C (target spec)
(Note)
170°C (typ.)
130°C (typ.)
Junction temperature
TSD
H
ALERT output
L
Note: Pre-shipment testing is not performed.
14. ISD (Over current detection)
Current that flow through output power MOSFETs are monitored individually. If over-current is detected in at
least one of all output power MOSFETs, all output power MOSFETs are turned off then this status is kept until
ENABLE signal is input. Target value in design is 6A and dispersion of ±1.5A should be considered.
ISD = 6A (typ.) ±1.5A (Note)
6.0A (typ.)
Output power MOSFET
drain current
H
ALERT output
L
Insensitive
Period
(4us(typ.))
Output :off
Output :on
H
ENABLE input
L
0.15ms(min.)
Note: Pre-shipment testing is not performed.
11
V1.0
2011-03-01
11 Page |
Páginas | Total 30 Páginas | |
PDF Descargar | [ Datasheet THB6064AH.PDF ] |
Número de pieza | Descripción | Fabricantes |
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