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PDF FMMT4124 Data sheet ( Hoja de datos )
| Número de pieza | FMMT4124 | |
| Descripción | NPN Transistor | |
| Fabricantes | Jin Yu Semiconductor | |
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FMMT4124
TRANSISTOR (NPN)
FEATURES
Switching Application
MARKING:ZC
SOT–23
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
30
VCEO Collector-Emitter Voltage
25
VEBO Emitter-Base Voltage
5
IC Collector Current
200
PC Collector Power Dissipation
330
RΘJA Thermal Resistance From Junction To Ambient
378
Tj Junction Temperature
Tstg Storage Temperature
150
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Symbol
V(BR)CBO
V(BR)CEO*
Test conditions
IC=10µA, IE=0
IC=1mA, IB=0
Min Typ Max Unit
30 V
25 V
Emitter-base breakdown voltage
V(BR)EBO IE=10µA, IC=0
5
V
Collector cut-off current
Emitter cut-off current
ICBO
IEBO
VCB=20V, IE=0
VEB=3V, IC=0
50 nA
50 nA
DC current gain
hFE(1) *
hFE(2) *
VCE=1V, IC=2mA
VCE=1V, IC=50mA
120
60
360
Collector-emitter saturation voltage
VCE(sat)* IC=50mA, IB=5mA
0.3 V
Base-emitter saturation voltage
Transition frequency
VBE(sat)*
fT
IC=50mA, IB=5mA
VCE=20V,IC=10mA,
f=100MHz
300
0.95 V
MHz
Collector output capacitance
Emitter input capacitance
Cob VCB=5V, IE=0, f=140KHz
CIb VBE=0.5V, IE=0, f=140KHz
4 pF
8 pF
*Pulse test
JinYu
semiconductor
www.htsemi.com
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