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PDF NTD70N03R Data sheet ( Hoja de datos )
| Número de pieza | NTD70N03R | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NTD70N03R
Power MOSFET
72 A, 25 V, N-Channel DPAK
Features
•ăPlanar HD3e Process for Fast Switching Performance
•ăLow RDS(on) to Minimize Conduction Loss
•ăLow CISS to Minimize Driver Loss
•ăLow Gate Charge
•ăPb-Free Packages are Available
MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified)
Parameter
Symbol Value Unit
Drain-to-Source Voltage
Gate-to-Source Voltage - Continuous
Thermal Resistance - Junction-to-Case
Total Power Dissipation @ TC = 25°C
Drain Current
- Continuous @ TC = 25°C, Chip
- Continuous @ TC = 25°C, Limited by Package
- Continuous @ TA = 25°C, Limited by Wires
- Single Pulse (tp = 10 ms)
Thermal Resistance - Junction-to-Ambient
ą(Note1)
Total Power Dissipation @ TA = 25°C
Drain Current - Continuous @ TA = 25°C
Thermal Resistance - Junction-to-Ambient
ą(Note2)
Total Power Dissipation @ TA = 25°C
Drain Current - Continuous @ TA = 25°C
Operating and Storage Temperature Range
VDSS
VGS
RqJC
PD
ID
ID
ID
IDM
RqJA
PD
ID
RqJA
PD
ID
TJ, Tstg
25
±20
2.4
62.5
Vdc
Vdc
°C/W
W
72.0 A
62.8 A
32 A
140 A
80 °C/W
1.87 W
12.0 A
110 °C/W
1.36
10.0
-55 to
175
W
A
°C
Single Pulse Drain-to-Source Avalanche
Energy - Starting TJ = 25°C
(VDD = 30 Vdc, VGS = 10 Vdc, IL = 12 Apk,
L = 1 mH, RG = 25 W)
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from Case for 10 s
EAS 71.7 mJ
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using 0.5 sq. in. pad size.
2. When surface mounted to an FR4 board using minimum recommended
pad size.
http://onsemi.com
V(BR)DSS
25 V
RDS(on) TYP
5.6 mW
ID MAX
72 A
N-Channel
D
G
S
MARKING DIAGRAMS
4
12
3
DPAK
CASE 369AA
STYLE 2
4
4
Drain
1
Gate
2
Drain
3
Source
4
Drain
1
2
3
DPAK
CASE 369D
STYLE 2
12 3
Gate Drain Source
70N03
Y
WW
G
= Device Code
= Year
= Work Week
= Pb-Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
©Ă Semiconductor Components Industries, LLC, 2008
March, 2008 - Rev. 10
1
Publication Order Number:
NTD70N03R/D
1 page  
1.0
D = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
SINGLE PULSE
0.01
1.0E-05
1.0E-04
NTD70N03R
P(pk)
RqJC(t) = r(t) RqJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
t1 READ TIME AT t1
t2 TJ(pk) - TC = P(pk) RqJC(t)
DUTY CYCLE, D = t1/t2
1.0E-03
1.0E-02
t, TIME (ms)
1.0E-01
Figure 13. Thermal Response
1.0E+00
1.0E+01
ORDERING INFORMATION
Order Number
Package
Shipping†
NTD70N03R
DPAK-3
75 Units / Rail
NTD70N03RG
DPAK-3
(Pb-Free)
75 Units / Rail
NTD70N03RT4
DPAK-3
2500 / Tape & Reel
NTD70N03RT4G
DPAK-3
(Pb-Free)
2500 / Tape & Reel
NTD70N03R-1
DPAK-3 Straight Lead
75 Units / Rail
NTD70N03R-1G
DPAK-3 Straight Lead
(Pb-Free)
75 Units / Rail
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Spe‐
cifications Brochure, BRD8011/D.
http://onsemi.com
5
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